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BFR35APE6327

Part No BFR35APE6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 15V SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 5GHz
Noise Figure (dB Typ @ f) 1.4dB to 2dB @ 900MHz to 1.8GHz
Gain 10.5dB to 16dB
Maximum Power Dissipation 280mW
Typical Gain (hFE) (Min) 70 @ 15mA, 8V
Maximum Current Collector 45mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Win Source Part Number 201170-BFR35APE6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFR35APE6327 CAD Model

Description

Description

The BFR35APE6327 transistor is engineered for RF applications requiring high gain and low noise. It's particularly suited to broadband applications and RF amplification due to its wide bandwidth capabilities and robust design.

Applications

  • Broadband RF applications
  • Telecommunication systems
  • Radio frequency identifications (RFID)
  • Signal boosters

Features and Benefits

  • High Gain: Enhances signal strength efficiently.
  • Low Noise: Ideal for noise-sensitive applications.
  • Wide Bandwidth: Compatible with diverse RF applications.
  • Compact Size: Saves space in design layouts.

Additional Details

This component is encapsulated in a compact and reliable package, ensuring durability and optimal performance across various installations. The BFR35APE6327 is a versatile solution, adaptable to numerous RF design requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0989 $58.8791
46+ $2.5422 $116.9412
71+ $2.4636 $174.9156
97+ $2.3839 $231.2383
126+ $2.3042 $290.3292
168+ $2.0663 $347.1384
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Availability: 8,160 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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