The Vishay 102119-SI5504BDC-T1-GE3 is an N and P-Channel FET with logic level gate feature designed for use in discrete semiconductor products.

• Drain-Source Breakdown Voltage: 30V
• Maximum Rds On at Id,Vgs: 65 mOhm @ 3.1A, 10V
• Maximum Power Dissipation: 3.12W, 3.1W
• Continuous Drain Current at 25°C: 4A, 3.7A
• Package: 1206-8 ChipFET case
• Mounting: SMD (SMT)
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 7nC @ 10V
• Maximum Input Capacitance: 220pF @ 15V
• Temperature Range: -55°C to 150°C (TJ)
• Market Status: Active
• Supply and Demand Status: Balance