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Same model may have multiple batches, images only for reference.
BFR380TE6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BFR380TE6327

Part No BFR380TE6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 6V SC-75
Datasheet
BFR380TE6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 9V
Frequency - Transition 14GHz
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
Gain 12.5dB
Maximum Power Dissipation 380mW
Typical Gain (hFE) (Min) 60 @ 40mA, 3V
Maximum Current Collector 80mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-75
Win Source Part Number 201172-BFR380TE6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFR380TE6327 CAD Model

Description

Product Overview

The BFR380TE6327 transistor is engineered to deliver superior RF performance, making it ideal for high-frequency applications. Its innovative design guarantees optimized power efficiency and signal integrity.

Features and Benefits

  • Optimized Signal Fidelity: Maintains high-quality signal transmission.
  • Power Efficiency: Low power consumption for sustainable operation.
  • High-Frequency Capability: Effective for applications up to 6 GHz.
  • Durability: Built to withstand challenging environmental conditions.

Applications

  • RF Amplification Systems
  • Telecommunication Transceivers
  • Satellite Communication Devices
  • Wireless Infrastructure Equipment

This component offers a seamless blend of efficiency and performance, crucial for developers focusing on cutting-edge RF technologies.

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