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Same model may have multiple batches, images only for reference.
BFR840L3RHESDE6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BFR840L3RHESDE6327XTSA1

Part No BFR840L3RHESDE6327XTSA1
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description RF TRANS NPN 2.6V 75GHZ TSLP-3  /  RF Transistor NPN 2.6V 35mA 75GHz 75mW Surface Mount PG-TSLP-3
Datasheet
BFR840L3RHESDE6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Mfr Infineon Technologies
Package Tape & Reel
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 2.6V
Frequency - Transition 75GHz
Noise Figure (dB Typ @ f) 0.5dB @ 450MHz
Gain 27dB
Power - Max 75mW
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA, 1.8V
Current - Collector (Ic) (Max) 35mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case SC-101, SOT-883
Supplier Device Package PG-TSLP-3
Base Product Number BFR840
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Names SP000978848,BFR840L3RHESDE6327XTSA1CT,BFR840L3RHESDE6327XTSA1TR,BFR840L3RHESDE6327XTSA1DKR,INFINFBFR840L3RHESDE6327XTSA1,2156-BFR840L3RHESDE6327XTSA1
Standard Package 15,000
Win Source Part Number 962557-BFR840L3RHESDE6327XTSA1
Ultra Librarian 3D Model Ultra Librarian BFR840L3RHESDE6327XTSA1 CAD Model

Description

The Infineon Technologies BFR840L3RHESDE6327XTSA1 is a high-performance NPN bipolar junction transistor that is designed for use in a variety of applications.

  • Maximum Power: 75mW
  • Voltage Range: 2.6V
  • DC Current Gain: 150 @ 10mA and 1.8V
  • Frequency Transition: 75GHz
  • Noise Figure: 0.5dB @ 450MHz
  • Package: SC-101, SOT-883
  • Supplier Package: PG-TSLP-3

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