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BFS17W E6327

Part No BFS17W E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR NPN RF 15V SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 15V
Frequency - Transition 1.4GHz
Noise Figure (dB Typ @ f) 3.5dB to 5dB @ 800MHz
Maximum Power Dissipation 280mW
Typical Gain (hFE) (Min) 40 @ 2mA, 1V
Maximum Current Collector 25mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Win Source Part Number 201180-BFS17W E6327
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BFS17W E6327 CAD Model

Description

Product Overview

Introducing the BFS17W E6327, a versatile semiconductor component essential for high-efficiency amplification. Its robust performance characteristics make it suitable for a variety of technological applications.

Key Features and Benefits

  • Wide bandwidth capabilities: Supports a range of applications and technologies.
  • Compact and lightweight: Facilitates easy integration into electronic circuits.
  • Temperature resilience: Maintains performance across diverse operating conditions.

Applications

  • Mobile Devices: Enhance connectivity and processing speed.
  • Home Appliances: Improve system functionality and efficiency.
  • Navigation Systems: Boost precise real-time data processing.

The BFS17W E6327 is perfect for developers looking to maximize the efficiency of their electronic designs.

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