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BFS483 E6327

Part No BFS483 E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF NPN 12V SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN (Dual)
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Gain 19dB
Maximum Power Dissipation 450mW
Typical Gain (hFE) (Min) 70 @ 15mA, 8V
Maximum Current Collector 65mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT363-6
Win Source Part Number 201189-BFS483 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BFS483 E6327 CAD Model

Description

Product Overview

The BFS483 E6327 is a state-of-the-art NPN RF transistor designed for projects where superior signal processing is critical. Combining reliability with advanced technology, it offers unparalleled performance for modern electronics.

Features and Benefits

  • Precision Engineering: High accuracy in signal amplification for critical applications.
  • Durable Construction: Built for longevity, reducing maintenance needs.
  • Wide Frequency Range: Adaptable to various frequency demands, enhancing versatility.

Applications

  • High-fidelity audio processing
  • Advanced RF signal chains
  • Communications infrastructure

The BFS483 E6327 combines technical excellence with robust capabilities, making it indispensable to engineers and innovators crafting next-generation electronic solutions.

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