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Same model may have multiple batches, images only for reference.
BG5412K H6327 Real Image
Same model may have multiple batches, images only for reference.

BG5412K H6327

Part No BG5412K H6327
Manufacturer Infineon Technologies
Catalog OEM Parts (A - B)
Description Mosfet N-ch Dual 8V 25MA SOT363
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-363-6
Continuous Drain Current (ID) 25 mA
Current Rating 25 mA
Drain to Source Breakdown Voltage 12 V
Drain to Source Voltage (Vdss) 12 V
Element Configuration Dual
Frequency 800 MHz
Gain 24 dB
Gate to Source Voltage (Vgs) 6 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 200 mW
Noise Figure 1.1 dB
Number of Pins 6
Power Dissipation 200 mW
RoHS Compliant
Test Current 10 mA
Test Voltage 5 V
Voltage Rating 8 V
Win Source Part Number 967541-BG5412K H6327
Categories OEM Parts(A-B)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian BG5412K H6327 CAD Model

Description

The Infineon Technologies BG5412K H6327 is a dual element configuration transistor that has a voltage rating of 8V and a current rating of 25mA.

  • Voltage Rating: 8V
  • Current Rating: 25mA
  • Drain to Source Voltage (Vdss): 12V
  • Frequency: 800MHz
  • Power Dissipation: 200mW
  • Gain: 24dB
  • Noise Figure: 1.1dB
  • Number of Pins: 6
  • Package: SOT-363-6 case
  • Mounting Type: Surface mount technology (SMT)
  • Maximum Operating Temperature: 150°C
  • RoHS Compliant: Yes

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