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BGB540E6327

Part No BGB540E6327
Manufacturer Infineon Technologies
Catalog RF Transistors (BJT)
Description TRANSISTOR RF ACT BIAS SOT-343
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity NPN
VCEO Maximum Collector-Emitter Breakdown Voltage 3.5V
Noise Figure (dB Typ @ f) 1.3dB to 2dB @ 900MHz to 1.8GHz
Gain 16dB to 17.5dB
Maximum Power Dissipation 120mW
Maximum Current Collector 30mA
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT343-4
Win Source Part Number 201206-BGB540E6327
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BGB540E6327 CAD Model

Description

Product Description

The BGB540E6327 is designed for high power RF applications, providing superior power output and efficiency. It is especially suitable for systems requiring high linearity and low noise characteristics.

Applications

  • Power amplifiers
  • Television broadcasting
  • Aerospace communication equipment
  • Advanced radar systems

Features and Benefits

  • High power output: Suitable for demanding applications.
  • Excellent linearity: Reduces distortion for clearer signals.
  • Low insertion loss: Enhances system performance.
  • Wide operational bandwidth: Accommodates various frequency demands.

Additional Details

With its robust design, the BGB540E6327 promises reliability and longevity, making it a preferred choice for critical communication infrastructure projects.

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