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Same model may have multiple batches, images only for reference.
BSB012NE2LX Real Image
Same model may have multiple batches, images only for reference.

BSB012NE2LX

Part No BSB012NE2LX
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 37A/170A 2WDSON
Datasheet
BSB012NE2LX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 37A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 12 V
Power Dissipation (Max) 2.8W (Ta), 57W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON
Standard Package 5,000 pcs
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 571967-BSB012NE2LX
Ultra Librarian 3D Model Ultra Librarian BSB012NE2LX CAD Model

Description

The 571967-BSB012NE2LX is a N-Channel MOSFET transistor from the OptiMOS™ series by Infineon Technologies.

  • Vdss: 25V
  • Id @ 25°C: 37A
  • Rds On (Maximum) @ 30A, 10V: 1.2mOhm
  • Qg @ 10V: 67nC
  • Ciss @ 12V: 4900pF
  • Package: 3-WDSON
  • Power Dissipation @ Ta: 2.8W
  • Power Dissipation @ Tc: 57W
  • Operating Temperature: -40°C to 150°C (TJ)
  • Status: Obsolete

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