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Same model may have multiple batches, images only for reference.
BSB019N03LXG Real Image
Same model may have multiple batches, images only for reference.

BSB019N03LXG

Part No BSB019N03LXG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 174A 2WDSON
Datasheet
BSB019N03LXG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 32A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 92nC @ 10V
Max Input Capacitance 8400pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 1.9 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 82819-BSB019N03LXG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSB019N03LXG CAD Model

Description

BSB019N03LXG High-Capacity MOSFET

The BSB019N03LXG stands out as a high-capacity MOSFET, providing reliable performance in demanding electronic circuits. Its robust design ensures longevity, even in challenging environments, making it a reliable component for complex projects.

  • Applications/Projects:
    • Solar inverters
    • Uninterruptible power supplies (UPS)
    • Battery management systems
  • Features and Benefits:
    • Enhanced thermal performance
    • Low gate charge
    • Superior switching efficiency
    • Durable structure for extended lifespan

The BSB019N03LXG is the go-to choice for applications requiring dependable and lasting MOSFET performance.

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44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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