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BSC004NE2LS5ATMA1

Part No BSC004NE2LS5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description TRENCH <= 40V / N-Channel 25 V 40A (Ta), 479A (Tc) 2.5W (Ta), 188W (Tc) Surface Mount PG-TDSON-8
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta) , 479A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.45mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 238 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 12.5 V
Power Dissipation (Max) 2.5W (Ta) , 188W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1345752-BSC004NE2LS5ATMA1
Ultra Librarian 3D Model Ultra Librarian BSC004NE2LS5ATMA1 CAD Model

Description

The BSC004NE2LS5ATMA1 is a discrete semiconductor product that belongs to the transistors category and is part of the OptiMOS™ series from Infineon Technologies.

  • Type: MOSFET (Metal Oxide), N-Channel FET
  • Drain to Source Voltage (Vdss): 25V
  • Power Dissipation: 2.5W (Ta), 188W (Tc)
  • Package: Tape and Reel
  • Standard Package: 5,000
  • Gate Charge (Qg): 238 nC @ 10 V
  • Input Capacitance (Ciss): 11000 pF @ 12.5 V
  • MSL Level: 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • HTSUS Code: 8541.29.0095

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