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PJP60R190E_T0_00001

Name: PJP60R190E_T0_00001
Brand: Panjit
SKU: 1342308
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	PJP60R190E_T0_00001
Manufacturer	Panjit
Catalog	Transistors - FETs, MOSFETs - RF
Description	600V N-CHANNEL SUPER JUNCTION MO / N-Channel 600 V 2.1A (Ta), 20A (Tc) 2W (Ta), 231W (Tc) Through Hole TO-220AB
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Panjit International Inc.
Package	Tube
Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	2.1A (Ta) , 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	196mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1421 pF @ 25 V
Power Dissipation (Max)	2W (Ta) , 231W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	PJP60R
Standard Package	50
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1342308-PJP60R190E_T0_00001
Ultra Librarian 3D Model	Ultra Librarian PJP60R190E_T0_00001 CAD Model

Alternative Products

Description

The PJP60R190E_T0_00001 is a N-channel MOSFET transistor from Panjit International Inc. Bold text is added to Panjit International Inc..

Channel Type: N-Channel
Drain to Source Voltage: 600 V
Power Dissipation (Ta): 2W
Power Dissipation (Tc): 231W
Mounting Type: Through Hole
Package: TO-220-3
Vgs (Max): ±20V
Operating Temperature: -55°C to 150°C (TJ)
Continuous Drain Current (Ta): 2.1A
Continuous Drain Current (Tc): 20A
Rds On (Max): 196mOhm @ 10A, 10V
Input Capacitance (Ciss): 1421 pF @ 25 V
Gate Charge (Qg): 62 nC @ 10 V

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