BSC009NE2LS

Part No BSC009NE2LS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 41A 8TDSON
Datasheet
Sample
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 41A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 57nC @ 10V
Max Input Capacitance 3900pF @ 12V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.5W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 0.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 012119-BSC009NE2LS
Popularity Medium
Supply and Demand Status Limited

Description

The Infineon Technologies MOSFET is a high-quality electronic component that is designed to provide excellent performance. This N-channel MOSFET has a power dissipation of 2.5W (Ta), 74W (Tc), and a continuous drain current of 41A (Ta), 100A (Tc). It also has a maximum Rds On at Id,Vgs of 0.9 mOhm @ 30A, 10V. This product is mounted on a PG-TDSON-8 package and has a popularity rating of medium. It is recommended to check its availability before placing an order.

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Pricing & Ordering

$4.3995
Quantity Unit Price Ext. Price
8+ $6.403 $51.224
20+ $5.254 $105.080
30+ $5.090 $152.700
41+ $4.926 $201.966
53+ $4.762 $252.386
71+ $4.269 $303.099
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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*
Availability: 19,400 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

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