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BSC017N04NS G

Part No BSC017N04NS G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TDSON-8 / Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 85μA
Max Gate Charge 108nC @ 10V
Max Input Capacitance 8800pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
Maximum Rds On at Id,Vgs 1.7 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 127575-BSC017N04NS G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name BSC017N04NS
Introduction Date January 27, 2009
ECCN EAR99
Country of Origin Austria, China, Germany, Malaysia, Thailand
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian BSC017N04NS G CAD Model

Description

The BSC017N04NS G is a high-performance N-channel power MOSFET designed for optimal efficiency in switching applications. With its low on-state resistance and compact design, this MOSFET is an excellent choice for power management solutions.

Features and Benefits

  • Low R<sub>DS(on) for enhanced efficiency
  • Fast switching speeds reduce switching losses
  • High current capacity supports heavier loads
  • Compact package improves design flexibility

Applications

  • DC-DC converters
  • Switching regulators
  • Load switch systems
  • Motor drive controllers
  • LED lighting systems

This device is ideal for engineers looking to design power-efficient applications with essential load-driving capabilities.

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