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BSC018NE2LSI

Part No BSC018NE2LSI
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 29A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 2500pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 012121-BSC018NE2LSI
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC018NE2LSI CAD Model

Description

The BSC018NE2LSI is engineered for applications demanding high-speed switching and efficiency. Its design is optimized to support various heavy-duty applications, offering both performance and reliability.

Features and Benefits

  • High power density for demanding applications
  • Reduced switching losses enhance efficiency
  • Long-lasting and rugged design
  • Minimal thermal resistance facilitates heat dissipation

Applications

  • High-frequency converters
  • Advanced power tools
  • Uninterruptible Power Supplies (UPS)
  • Electric vehicle systems
  • AC/DC adapters

Ideal for high-load applications necessitating efficient power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6840 $51.3000
180+ $0.5613 $101.0340
280+ $0.5437 $152.2360
385+ $0.5262 $202.5870
495+ $0.5087 $251.8065
660+ $0.4560 $300.9600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,934 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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