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BSC035N10NS5ATMA1

Part No BSC035N10NS5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.8V @ 115μA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 6500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024329-BSC035N10NS5ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC035N10NS5ATMA1 CAD Model

Description

The Infineon Technologies BSC035N10NS5ATMA1 is an N-channel MOSFET with a PG-TDSON-8 package and a drain-source breakdown voltage of 100V.

  • Channel Type: N-channel
  • Package: PG-TDSON-8
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Maximum Rds On: 3.5 mOhm @ 50A, 10V
  • Drive Voltage: 6V, 10V
  • Gate-Source Threshold Voltage: 3.8V @ 115μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 87nC @ 10V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4150 $56.6000
80+ $1.3254 $106.0320
120+ $1.2806 $153.6720
170+ $1.1911 $202.4870
220+ $1.1463 $252.1860
275+ $1.1015 $302.9125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,020 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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