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BSC035N10NS5ATMA1

Name: BSC035N10NS5ATMA1
Brand: Infineon Technologies
SKU: 439063
Availability: InStock
Rating: 4.85 (48 reviews)

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Part No	BSC035N10NS5ATMA1
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 100A TDSON-8
Datasheet	BSC035N10NS5ATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	100V
Continuous Drain Current at 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Gate-Source Threshold Voltage	3.8V @ 115μA
Max Gate Charge	87nC @ 10V
Max Input Capacitance	6500pF @ 50V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	2.5W (Ta), 156W (Tc)
Maximum Rds On at Id,Vgs	3.5 mOhm @ 50A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TDSON-8
Dimension	8-PowerTDFN
Win Source Part Number	1024329-BSC035N10NS5ATMA1
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian BSC035N10NS5ATMA1 CAD Model

Alternative Products

Description

The Infineon Technologies BSC035N10NS5ATMA1 is an N-channel MOSFET with a PG-TDSON-8 package and a drain-source breakdown voltage of 100V.

Channel Type: N-channel
Package: PG-TDSON-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current: 100A (Tc) @ 25°C
Maximum Rds On: 3.5 mOhm @ 50A, 10V
Drive Voltage: 6V, 10V
Gate-Source Threshold Voltage: 3.8V @ 115μA
Maximum Gate-Source Voltage: ±20V
Maximum Gate Charge: 87nC @ 10V
Supply and Demand Status: Limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
40+	$1.4150	$56.6000
80+	$1.3254	$106.0320
120+	$1.2806	$153.6720
170+	$1.1911	$202.4870
220+	$1.1463	$252.1860
275+	$1.1015	$302.9125

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 46,020 pieces

MOQ: 40 pcs

Order Increment : 1 pcs

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