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Same model may have multiple batches, images only for reference.
BSC0502NSIATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSC0502NSIATMA1

Part No BSC0502NSIATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 26A TDSON-8 / Trans MOSFET N-CH 30V 26A 8-Pin TDSON EP T/R
Datasheet
BSC0502NSIATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1600pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.5W (Ta), 43W (Tc)
Rds On (Maximum) @ Id, Vgs 2.3 mOhm @ 30A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TDSON-8
Package 8-PowerTDFN
Win Source Part Number 770407-BSC0502NSIATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name BSC0502NSI
Introduction Date July 13, 2015
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian BSC0502NSIATMA1 CAD Model

Description

The Infineon Technologies BSC0502NSIATMA1 is a MOSFET transistor from Infineon Technologies.

  • Channel Type: N
  • Drain-Source Voltage: 30V
  • Continuous Drain Current: 26A @ Ta, 100A @ Tc
  • Power Dissipation: 2.5W @ Ta, 43W @ Tc
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 1600pF @ 15V
  • Rds On @ Id,Vgs: 2.3 mOhm @ 30A, 10V
  • Package: PG-TDSON-8
  • Operating Temperature Range: -55°C to 150°C (TJ)

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135+ $2.2316 $301.2660
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