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Same model may have multiple batches, images only for reference.
SSM6N7002BFE,LM Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N7002BFE,LM

Part No SSM6N7002BFE,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 0.2A ES6
Datasheet
SSM6N7002BFE,LM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 200mA
Maximum Rds On at Id,Vgs 2.1 Ohm @ 500mA, 10V
Gate-Source Threshold Voltage 3.1V @ 250μA
Max Input Capacitance 17pF @ 25V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 1102327-SSM6N7002BFE,LM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6N7002BFE,LM CAD Model

Description

The SSM6N7002BFE,LM is a dual N-channel MOSFET transistor designed for use in logic level gate applications, manufactured by Toshiba Semiconductor and Storage.

  • Status: Sufficient supply and demand
  • Compliance: RoHS compliant
  • Applications: Suitable for use in a variety of applications, including power switching, motor control, and lighting control

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Pricing & Ordering

Quantity Unit Price Ext. Price
770+ $0.0650 $50.0500
1,875+ $0.0534 $100.1250
2,905+ $0.0517 $150.1885
4,000+ $0.0500 $200.0000
5,170+ $0.0484 $250.2280
6,915+ $0.0434 $300.1110
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 770 pcs
Order Increment : 1 pcs
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