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BSC117N08NS5ATMA1

Part No BSC117N08NS5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 49A 8TDSON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.8V @ 22μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 1300pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 11.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024350-BSC117N08NS5ATMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC117N08NS5ATMA1 CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel polarity electronic component that is designed for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Mounting: SMD (SMT)
  • Package: Reel - TR
  • Power Dissipation: 2.5W (Ta), 50W (Tc)
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current @ 25°C: 49A (Tc)
  • Gate-Source Threshold Voltage: 3.8V @ 22μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 1300pF @ 40V
  • Popularity: Medium
  • Supply and Demand: Limited
  • Case/Package: PG-TDSON-8, 8-PowerTDFN

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9433 $51.8815
115+ $0.8836 $101.6140
180+ $0.8538 $153.6840
255+ $0.7941 $202.4955
330+ $0.7642 $252.1860
410+ $0.7344 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,740 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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