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Same model may have multiple batches, images only for reference.
RJK0658DPA-00#J5A
Same model may have multiple batches, images only for reference.

RJK0658DPA-00#J5A

Part No RJK0658DPA-00#J5A
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 25A 8WPAK / N-Channel 60 V 25A (Ta) 50W (Tc) Surface Mount 8-WPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.1mOhm @ 12.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 19.4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1580 pF @ 10 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WPAK
Package / Case 8-WFDFN Exposed Pad
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 891768-RJK0658DPA-00#J5A
Ultra Librarian 3D Model Ultra Librarian RJK0658DPA-00#J5A CAD Model

Description

The 891768-RJK0658DPA-00#J5A is a single N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) from Renesas Electronics America.

  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 25A
  • Rds On (Max) @ Id, Vgs: 11.1mOhm @ 12.5A and 10V
  • Package: 8-WFDFN exposed pad
  • Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
  • Operating Temperature: -40°C to 150°C
  • Status: Active

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