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BSC160N10NS3GATMA1

Part No BSC160N10NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 42A TDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 8.8A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 33μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1700pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 33A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024353-BSC160N10NS3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSC160N10NS3GATMA1 CAD Model

Description

The Infineon Technologies BSC160N10NS3GATMA1 is an N-Channel MOSFET, suitable for use in a variety of applications.

  • Maximum Power Dissipation: 60W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 8.8A (Ta) or 42A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 33μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 1700pF @ 50V
  • Maximum Rds On: 16 mOhm @ 33A and 10V
  • Applications: discrete semiconductor products
  • Packaging: PG-TDSON-8
  • Operating Temperature: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6008 $56.0280
80+ $1.3135 $105.0800
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
215+ $1.1903 $255.9145
285+ $1.0672 $304.1520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,990 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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