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BSC22DN20NS3G

Part No BSC22DN20NS3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description OptiMOSTM3 Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Categories Uncategorized
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 819717-BSC22DN20NS3G
Ultra Librarian 3D Model Ultra Librarian BSC22DN20NS3G CAD Model

Description

The BSC22DN20NS3G is a OptiMOS™ power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-efficiency power conversion and switching applications, specifically targeting applications requiring higher voltage ratings. It features a low on-state resistance (Rds(on)) and optimized switching behavior for reduced power losses.

Applications

  • Synchronous rectification in switched-mode power supplies (SMPS): Used in secondary rectification stages where higher voltage ratings are required.
  • DC-DC converters: Used in voltage regulators and other DC-DC conversion circuits for various applications.
  • Motor control applications: Drives and controls the speed of DC motors.
  • Battery management systems (BMS): Used in protection circuits and switching applications within BMS, particularly in higher voltage battery packs.
  • Solar inverters: Used in DC-DC boost stages or DC-AC inverters.

Features

  • Low on-state resistance (Rds(on)): Minimizes conduction losses for high efficiency.
  • Optimized switching behavior: Reduces switching losses for higher efficiency.
  • Logic level gate drive: Simplified gate drive circuitry due to its ability to be driven directly by microcontrollers.
  • Avalanche rated: Robust and can withstand transient voltage spikes.
  • PG-TDSON-8 package: Small footprint and excellent thermal performance.

Benefits

  • High efficiency: Achieves high efficiency due to low Rds(on) and optimized switching.
  • Reduced heat dissipation: Results in less heat generation, simplifying thermal management.
  • Simplified design: Logic level gate drive enables easier integration with control circuits.
  • Improved reliability: Avalanche rating enhances robustness and protection against voltage transients.
  • Compact design: Small PG-TDSON-8 package enables high power density designs.

Technical Specifications

  • Channel Type: N-Channel
  • Drain-Source Voltage (Vds): 200 V
  • Continuous Drain Current (Id): 22 A
  • On-State Resistance (Rds(on)): 22 mΩ (at Vgs = 10 V)
  • Gate Threshold Voltage (Vgs(th)): Refer to datasheet
  • Total Gate Charge (Qg): Refer to datasheet
  • Package: PG-TDSON-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9053 $58.8445
160+ $0.7429 $118.8640
245+ $0.7197 $176.3265
335+ $0.6965 $233.3275
430+ $0.6733 $289.5190
575+ $0.6036 $347.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,552 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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