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BSC600N25NS3 G Real Image BSC600N25NS3 G Real Image1 BSC600N25NS3 G Real Image2
Same model may have multiple batches, images only for reference.
BSC600N25NS3 G Real Image BSC600N25NS3 G Real Image1 BSC600N25NS3 G Real Image2
BSC600N25NS3 G Real Image BSC600N25NS3 G Real Image1 BSC600N25NS3 G Real Image2
Same model may have multiple batches, images only for reference.

BSC600N25NS3 G

Part No BSC600N25NS3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 25A TDSON-8
Datasheet
BSC600N25NS3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 250V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 90μA
Gate Charge (Qg) (Maximum) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2350pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 125W (Tc)
Rds On (Maximum) @ Id, Vgs 60 mOhm @ 25A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TDSON-8
Package 8-PowerTDFN
Win Source Part Number 770417-BSC600N25NS3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSC600N25NS3 G CAD Model

Description

The BSC600N25NS3 G is a MOSFET transistor manufactured by Infineon Technologies.

  • Series: OptiMOS
  • Package: 8-PowerTDFN
  • Continuous Drain Current: 25A @ Tc
  • Drain-Source Voltage: 250V
  • Gate-Source Voltage: 10V
  • Power Dissipation: 125W @ Tc
  • Rds On: 60 mOhm @ 25A @ 10V
  • Application: Discrete Semiconductor Products
  • Popularity: Medium
  • Supply and Demand Status: Limited

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65+ $1.5513 $100.8345
100+ $1.5029 $150.2900
140+ $1.4544 $203.6160
180+ $1.4059 $253.0620
240+ $1.2605 $302.5200
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