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Same model may have multiple batches, images only for reference.
BSF134N10NJ3 G Real Image
Same model may have multiple batches, images only for reference.

BSF134N10NJ3 G

Part No BSF134N10NJ3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9A WDSON-2
Datasheet
BSF134N10NJ3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 40μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 2300pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 43W (Tc)
Maximum Rds On at Id,Vgs 13.4 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package MG-WDSON-2, CanPAK M
Dimension 3-WDSON
Win Source Part Number 012127-BSF134N10NJ3 G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSF134N10NJ3 G CAD Model

Description

BSF134N10NJ3 G Features and Benefits

  • High breakdown voltage for increased safety.
  • Fast switching capability.
  • Low input capacitance.

Applications

  • Solar inverters.
  • Uninterruptible Power Supplies (UPS).
  • Industrial power control.

The BSF134N10NJ3 G offers excellent switching performance and reliability, making it suitable for high-voltage applications and ensuring enhanced system protection.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5154 $51.5400
240+ $0.4229 $101.4960
370+ $0.4097 $151.5890
505+ $0.3965 $200.2325
655+ $0.3833 $251.0615
875+ $0.3436 $300.6500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 100 pcs
Order Increment : 1 pcs
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