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BSG0810NDI

Part No BSG0810NDI
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Pb-free lead plating; RoHS compliant
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 1632+
Reference case PG-TSDSON
Manufacturer Infineon Technologies
Manufacturer Homepage www.infineon.com
Win Source Part Number 744911-BSG0810NDI
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSG0810NDI CAD Model

Description

The BSG0810NDI is an RF power transistor manufactured by Infineon Technologies. It is designed for use in high-frequency applications where efficient power amplification is required. This MOSFET utilizes advanced process technology to deliver high gain, low noise, and excellent linearity, making it suitable for various communication and industrial applications.

Applications

  • RF power amplifiers for mobile communication base stations
  • Industrial heating and welding equipment
  • Radar systems
  • Broadcast transmitters
  • Medical RF applications

Features

  • High gain
  • Low noise figure
  • Excellent linearity
  • High breakdown voltage
  • Robust design for harsh environments

Benefits

  • Improved signal quality and range in communication systems
  • Efficient power amplification, reducing energy consumption
  • Enhanced reliability and longevity in demanding applications
  • Simplified system design due to integrated matching networks
  • Reduced maintenance costs due to robust construction

Technical Specifications

The BSG0810NDI is a discrete GaN-on-Si transistor. It typically operates at frequencies up to 1 GHz. It is designed to provide a high power gain, typically around 14 dB. The transistor operates at a voltage of 50 V, providing high power output for RF applications. The device is designed to be compact, often surface-mountable, facilitating easy integration into various circuit designs. The BSG0810NDI's low noise figure enhances its suitability for sensitive receiver applications, improving overall system performance. Furthermore, the high breakdown voltage ensures the device can withstand voltage spikes and transient conditions, thereby increasing reliability. The BSG0810NDI is tailored for high-performance RF amplifier systems, providing the necessary power and efficiency for modern communication technologies.

In summary, the BSG0810NDI from Infineon Technologies is an advanced RF power transistor characterized by high gain, low noise, and excellent linearity. It is ideal for use in RF power amplifiers in various applications, including telecommunications, industrial equipment, and radar systems, offering both performance and reliability in demanding environments.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7884 $53.6520
70+ $1.4675 $102.7250
110+ $1.4216 $156.3760
150+ $1.3757 $206.3550
190+ $1.3299 $252.6810
255+ $1.1923 $304.0365
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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