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Same model may have multiple batches, images only for reference.
BSG0813NDIATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSG0813NDIATMA1

Part No BSG0813NDIATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 19A/33A 8TISON
Datasheet
BSG0813NDIATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 4.5V Drive
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 19A, 33A
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 8.4nC @ 4.5V
Max Input Capacitance 1100pF @ 12V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 155°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TISON-8
Win Source Part Number 1024369-BSG0813NDIATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSG0813NDIATMA1 CAD Model

Description

The Infineon Technologies 2 N-Channel (Dual) Asymmetrical FET is a logic level gate, 4.5V drive FET that is ideal for use in discrete semiconductor products.

  • Channel Type: 2 N-Channel (Dual) Asymmetrical
  • Gate Drive: Logic Level, 4.5V
  • Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 19A and 33A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 8.4nC @ 4.5V
  • Maximum Input Capacitance: 1100pF @ 12V
  • Maximum Rds On: 3 mOhm @ 20A, 10V
  • Mounting: SMD (SMT)
  • Case/Package: PG-TISON-8
  • Supply and Demand Status: Balanced

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