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Same model may have multiple batches, images only for reference.
BSL303SPEH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSL303SPEH6327XTSA1

Part No BSL303SPEH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6.3A TSOP-6
Datasheet
BSL303SPEH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 30μA
Max Gate Charge 20.9nC @ 10V
Max Input Capacitance 1401pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 33 mOhm @ 6.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1024388-BSL303SPEH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSL303SPEH6327XTSA1 CAD Model

Description

The Infineon Technologies 1024388-BSL303SPEH6327XTSA1 is a P-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Mounting Technology: Surface-Mount
  • Packaging: Reel
  • Maximum Power Dissipation: 2W @ TA
  • Drive Voltage: 4.5V @ 10V
  • Operating Temperature: -55°C to 150°C
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6.3A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 30μA
  • Maximum Gate Charge: 20.9nC @ 10V
  • Maximum Input Capacitance: 1401pF @ 15V
  • Maximum Rds On @ Id, Vgs: 33 mOhm @ 6.3A, 10V
  • Supply and Demand Status: Balanced

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