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Same model may have multiple batches, images only for reference.
BSL802SNH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSL802SNH6327XTSA1

Part No BSL802SNH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 7.5A 6TSOP
Datasheet
BSL802SNH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Gate-Source Threshold Voltage 0.75V @ 30μA
Max Gate Charge 4.7nC @ 2.5V
Max Input Capacitance 1347pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 7.5A, 2.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSOP6-6
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1024401-BSL802SNH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSL802SNH6327XTSA1 CAD Model

Description

The BSL802SNH6327XTSA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for use in Discrete Semiconductor Products, particularly in SMD (SMT) applications.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 7.5A (Ta)
  • Gate-Source Threshold Voltage: 0.75V @ 30μA
  • Max Gate Charge: 4.7nC @ 2.5V
  • Max Input Capacitance: 1347pF @ 10V
  • Maximum Gate-Source Voltage: ±8V
  • Package: PG-TSOP6-6
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Temperature Range: -55°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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