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BSM35GD120DN2 eupec GmbH
Same model may have multiple batches, images only for reference.

BSM35GD120DN2

Part No BSM35GD120DN2
Manufacturer Infineon Technologies
Catalog IGBTs - Modules
Description IGBT MOD 1200V 50A 280W
Datasheet
BSM35GD120DN2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr Infineon Technologies
Package Tray
Product Status Obsolete
IGBT Type NPT
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 50 A
Power - Max 280 W
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 35A
Input Capacitance (Cies) @ Vce 2 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Base Product Number BSM35G
Standard Package 10 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572086-BSM35GD120DN2
Ultra Librarian 3D Model Ultra Librarian BSM35GD120DN2 CAD Model

Description

The Infineon Technologies electronic component with Win Source Part Number 572086-BSM35GD120DN2 is an obsolete IGBT module.

  • Category: Discrete Semiconductor Products, IGBT modules
  • Package: Tray
  • Quantity per Package: 10 pieces
  • Maximum Power: 280W
  • Configuration: Three-phase inverter
  • Input Type: Standard
  • IGBT Type: NPT
  • Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 50A
  • On-State Voltage Drop @ 15V, 35A: 3.2V
  • Input Capacitance @ 25V: 2nF
  • NTC Thermistor: No
  • Mounting: Chassis mounting
  • Package/Case: Module
  • Supplier Device Package: Module
  • Maximum Junction Temperature: 150°C
  • REACH Status: Unaffected
  • HTSUS Code: 8541.29.0095
  • Status: Obsolete
  • Moisture Sensitivity Level (MSL): 1

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