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Same model may have multiple batches, images only for reference.
BSO080P03NS3G Real Image
Same model may have multiple batches, images only for reference.

BSO080P03NS3G

Part No BSO080P03NS3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSO080P03 - 20V-250V P-CHANNEL P
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 14.8A, 10V
Vgs(th) (Max) @ Id 3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 6750 pF @ 15 V
Power Dissipation (Max) 1.6W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-DSO-8
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 819731-BSO080P03NS3G
Ultra Librarian 3D Model Ultra Librarian BSO080P03NS3G CAD Model

Description

The BSO080P03NS3G is a P-Channel MOSFET transistor in the OptiMOS™ 3 series.

  • Series: OptiMOS™ 3
  • Applications: FETs and MOSFETs
  • Package: Surface mount
  • Dimensions: 8-SOIC
  • Drain to source voltage (Vdss): 30V
  • Continuous drain current (Id): 12A @ 25°C
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A and 10V
  • Gate charge (Qg) @ max Vgs: 81nC @ 10V
  • Input capacitance (Ciss) @ max Vds: 6750pF @ 15V
  • Temperature range: -55°C to 150°C
  • HTSUS code: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.8182 $54.5456
18+ $5.5944 $100.6992
28+ $5.4196 $151.7488
39+ $5.2447 $204.5433
50+ $5.0699 $253.4950
67+ $4.5454 $304.5418
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Availability: 7,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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