The BSO080P3S is a P-channel StrongIRFET™ power MOSFET from Infineon Technologies. It is designed for high-performance power management applications.

Applications

• Synchronous Rectification in SMPS
• DC-DC Conversion
• Motor Control
• Load Switch
• Battery Management Systems

Features

• P-Channel MOSFET
• Low RDS(on) for reduced power losses and improved efficiency
• Logic Level Gate Drive
• Avalanche Rated
• RoHS Compliant
• Halogen-Free according to IEC61249-2-21

Benefits

• Increased Power Density: The BSO080P3S enables efficient power conversion in a small footprint.
• Improved Efficiency: Low RDS(on) minimizes conduction losses, leading to higher efficiency in power supplies and other applications.
• Simplified Design: Logic level gate drive simplifies the design process by allowing direct drive from microcontrollers and other logic devices.
• Robust Performance: Avalanche rating ensures reliable operation under transient conditions.
• Environmentally Friendly: RoHS compliance and halogen-free construction minimize environmental impact.

Additional Details

The BSO080P3S features a maximum drain-source voltage (VDS) of -30V and a continuous drain current (ID) of -8A. The typical gate threshold voltage (VGS(th)) is between 1V and 2.5V. The device is available in a SOT-223 package which is suitable for automated assembly. Its low gate charge (Qg) contributes to fast switching speeds and reduced switching losses. The operating junction temperature range is -55°C to +175°C. The RDS(on) at VGS=-10V and ID=-8A is typically 80 mΩ.