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Same model may have multiple batches, images only for reference.
BSO303P Real Image
Same model may have multiple batches, images only for reference.

BSO303P

Part No BSO303P
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description P-CHANNEL POWER MOSFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.2A
Rds On (Max) @ Id, Vgs 21mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 72.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1761pF @ 25V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO303
Standard Package 41 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 572113-BSO303P
Ultra Librarian 3D Model Ultra Librarian BSO303P CAD Model

Description

The OptiMOS™ 572113-BSO303P is a high-performance P-Channel MOSFET transistor array designed for various applications in the electronics industry.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 8.2A
  • Gate Type: Logic Level
  • Rds On (Max): 21mOhm @ 8.2A and 10V
  • Package: 8-SOIC
  • Gate Charge (Qg): 72.5nC @ 10V
  • Input Capacitance (Ciss): 1761pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Manufacturer: Infineon Technologies

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