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BSO612CVGHUMA1

Part No BSO612CVGHUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 60V 2A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3A, 2A
Maximum Rds On at Id,Vgs 120 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 4V @ 20μA
Max Gate Charge 15.5nC @ 10V
Max Input Capacitance 340pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-DSO-8
Win Source Part Number 142022-BSO612CVGHUMA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSO612CVGHUMA1 CAD Model

Description

Overview of BSO612CVGHUMA1

The BSO612CVGHUMA1 offers superior electrical performance tailored for cutting-edge applications. Its durability and efficiency make it a sought-after component for designers.

Features and Benefits

  • High-efficiency energy conversion
  • Compact semiconductor package
  • Optimized for minimal electromagnetic interference
  • Improved thermal management properties

Applications

  • Robust communication systems
  • High-frequency inverter circuits
  • Power grid management solutions
  • Advanced robotic controls

Additional Details

Engineered for flexibility, the BSO612CVGHUMA1 ensures high reliability, even in the most demanding operating conditions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6645 $59.8050
215+ $0.5453 $117.2395
330+ $0.5282 $174.3060
455+ $0.5112 $232.5960
585+ $0.4941 $289.0485
785+ $0.4431 $347.8335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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