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Same model may have multiple batches, images only for reference.
BSO615NGXUMA1 Real Image
Same model may have multiple batches, images only for reference.

BSO615NGXUMA1

Part No BSO615NGXUMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 8-SOIC  /  Mosfet Array 2 N-Channel (Dual) 60V 2.6A 2W (Ta) Surface Mount PG-DSO-8
Datasheet
BSO615NGXUMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Infineon Technologies
Series Automotive, AEC-Q101, SIPMOS®
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 150mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
Power - Max 2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package PG-DSO-8
Base Product Number BSO615
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-BSO615NGXUMA1DKR,448-BSO615NGXUMA1CT,448-BSO615NGXUMA1TR,SP005353857
Standard Package 2,500
Win Source Part Number 1159088-BSO615NGXUMA1
Ultra Librarian 3D Model Ultra Librarian BSO615NGXUMA1 CAD Model

Description

The BSO615NGXUMA1 MOSFET (Metal Oxide) transistor is a 2 N-Channel (Dual) FET type that features a logic level gate and a drain-to-source voltage of 60V.

  • FET Type: 2 N-Channel (Dual)
  • Gate Type: Logic Level
  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 2.6A
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
  • Power Dissipation: 2W (Ta)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Series: Automotive, AEC-Q101, SIPMOS®
  • Category: Transistors - FETs, MOSFETs - Arrays

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45+ $2.2256 $100.1520
70+ $2.1504 $150.5280
100+ $2.0000 $200.0000
130+ $1.9249 $250.2370
163+ $1.8497 $301.5011
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