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Same model may have multiple batches, images only for reference.
BSP300 E6327 Real Image
Same model may have multiple batches, images only for reference.

BSP300 E6327

Part No BSP300 E6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 190MA SOT-223
Datasheet
BSP300 E6327 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 230pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta)
Maximum Rds On at Id,Vgs 20 Ohm @ 190mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Dimension TO-261-4, TO-261AA
Win Source Part Number 201413-BSP300 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP300 E6327 CAD Model

Description

Overview

The BSP300 E6327 is designed for high-efficiency applications, featuring an N-channel MOSFET setup for enhanced performance in electronic devices.

Features and Benefits

  • Improved conduction efficiency, reducing power loss.
  • Compact design for integration into smaller devices.
  • Consistent performance under variable temperatures.

Applications

  • Networking Devices
  • Consumer Electronics
  • Renewable Energy Systems
  • Security Systems

Additional Details

This MOSFET provides a reliable solution for developers focused on energy efficiency and long-term reliability, ensuring minimal maintenance and downtime.

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