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Same model may have multiple batches, images only for reference.
BSP316P H6327 Infineon Technologies – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

BSP316P H6327

Part No BSP316P H6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description BSP316P H6327 Infineon Technologies MOSFETs P-Ch -100V -680mA SOT-223-3 datasheet, inventory, & pricing.
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon
Product Category MOSFETs
RoHS Details
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-223-4
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 680 mA
Rds On - Drain-Source Resistance 1.4 Ohms
Vgs - Gate-Source Voltage - 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage 1.5 V
Qg - Gate Charge 5.1 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.8 W
Channel Mode Enhancement
Qualification AEC-Q101
Packaging Reel
Brand Infineon Technologies
Configuration Single
Fall Time 25.9 ns
Forward Transconductance - Min 500 mS
Product Type MOSFETs
Rise Time 7.5 ns
Series BSP316
Factory Pack Quantity Factory Pack Quantity 1000
Subcategory Transistors
Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 67.4 ns
Typical Turn-On Delay Time 4.7 ns
Part # Aliases SP001058754 BSP316PH6327XTSA1
Unit Weight 0.003951 oz
Ultra Librarian 3D Model Ultra Librarian BSP316P H6327 CAD Model

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