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Same model may have multiple batches, images only for reference.
BSP60 E6327 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSP60 E6327

Part No BSP60 E6327
Manufacturer Infineon Technologies
Catalog Transistors (BJT) - Single
Description TRANS PNP DARL 45V 1A SOT-223
Datasheet
BSP60 E6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP - Darlington
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 1.8V @ 1mA, 1A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 2000 @ 500mA, 10V
Maximum Power Dissipation 1.5W
Frequency - Transition 200MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT223-4
Win Source Part Number 201416-BSP60 E6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSP60 E6327 CAD Model

Description

Overview

The BSP60 E6327 is a versatile NPN transistor that excels in low to medium power switching and amplification duties. It is valued for its reliability and ease of use in circuit designs.

Applications

  • General-purpose amplification
  • Signal processing
  • Control systems
  • Telecommunication circuits

Features and Benefits

  • Low collector-emitter saturation voltage for improved performance
  • High current gain for better amplification
  • Rugged and reliable operation under various conditions
  • Suitable for surface-mount designs

Additional Details

Ideal for educational projects and prototyping, the BSP60 E6327 provides a cost-effective solution without compromising performance or reliability, making it a popular choice among engineers and hobbyists alike.

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