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BSR316PH6327XTSA1

Part No BSR316PH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 360MA SC-59-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 170μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 165pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Tc)
Maximum Rds On at Id,Vgs 1.8 Ohm @ 360mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024474-BSR316PH6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSR316PH6327XTSA1 CAD Model

Description

The Infineon Technologies MOSFET is a discrete semiconductor product.

  • Supply and Demand Status: balanced
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 1024474-BSR316PH6327XTSA1
  • Category: MOSFET
  • Polarity: P-Channel
  • Power Dissipation (Max): 500mW (Tc)
  • Drain-Source Breakdown Voltage: 100V

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Pricing & Ordering

Quantity Unit Price Ext. Price
220+ $0.2294 $50.4680
535+ $0.1883 $100.7405
825+ $0.1824 $150.4800
1,135+ $0.1765 $200.3275
1,470+ $0.1706 $250.7820
1,965+ $0.1530 $300.6450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,140 pieces
MOQ: 220 pcs
Order Increment : 1 pcs
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