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Same model may have multiple batches, images only for reference.
BSR802N L6327 Real Image
Same model may have multiple batches, images only for reference.

BSR802N L6327

Part No BSR802N L6327
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.7A SC-59
Datasheet
BSR802N L6327 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.5V
Gate-Source Threshold Voltage 750mV @ 30μA
Max Gate Charge 4.7nC @ 2.5V
Max Input Capacitance 1447pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 3.7A, 2.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SC-59
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024481-BSR802N L6327
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSR802N L6327 CAD Model

Description

The Infineon Technologies BSR802N L6327 is a N-Channel MOSFET transistor used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (Max): 3.7A @ 25°C
  • Gate-Source Threshold Voltage: 750mV @ 30μA
  • Gate Charge (Max): 4.7nC @ 2.5V
  • Input Capacitance (Max): 1447pF @ 10V
  • Rds On (Max) @ Id,Vgs: 23 mOhm @ 3.7A, 2.5V
  • Power Dissipation: 500mW (Ta)
  • Mounting: SMD (SMT) technology
  • Status: Active
  • Packaging: Reel - TR

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2195 $58.1675
645+ $0.1802 $116.2290
995+ $0.1744 $173.5280
1,370+ $0.1686 $230.9820
1,775+ $0.1629 $289.1475
2,365+ $0.1467 $346.9455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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