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Same model may have multiple batches, images only for reference.
BSS139H6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS139H6327XTSA1

Part No BSS139H6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 100MA SOT23
Datasheet
BSS139H6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
Gate-Source Threshold Voltage 1V @ 56μA
Max Gate Charge 3.5nC @ 5V
Max Input Capacitance 76pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 14 Ohm @ 100μA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024502-BSS139H6327XTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS139H6327XTSA1 CAD Model

Description

The BSS139H6327XTSA1 is a medium-popularity N-channel MOSFET from Infineon Technologies that comes in a PG-SOT23-3 reference case.

  • Features: depletion mode, low power dissipation, and low input capacitance
  • Supply and Demand Status: balanced
  • Applications: power management and battery protection

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Pricing & Ordering

Quantity Unit Price Ext. Price
310+ $0.1639 $50.8090
655+ $0.1535 $100.5425
1,015+ $0.1483 $150.5245
1,450+ $0.1380 $200.1000
1,885+ $0.1328 $250.3280
2,355+ $0.1276 $300.4980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,090 pieces
MOQ: 310 pcs
Order Increment : 1 pcs
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