BSS223PWH6327XTSA1

Part No BSS223PWH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 390MA SOT-323
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 390mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.2V @ 1.5μA
Max Gate Charge 0.62nC @ 4.5V
Max Input Capacitance 56pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 250mW (Ta)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 390mA, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT323-3
Dimension SC-70, SOT-323
Win Source Part Number 104092-BSS223PWH6327XTSA1
Popularity Medium
Supply and Demand Status Balance

Description

The Infineon Technologies BSS223PWH6327XTSA1 is a P-channel MOSFET transistor that belongs to the category of discrete semiconductor products. It is a reel - TR packaged component with an SMD (SMT) mounting style. The maximum power dissipation of this MOSFET is 250mW (Ta), and it has a drain-source breakdown voltage of 20V. The continuous drain current at 25°C is 390mA (Ta), and the gate-source threshold voltage is 1.2V @ 1.5μA. The maximum Rds On at Id,Vgs is 1.2 Ohm @ 390mA, 4.5V. and a balance in supply and demand status.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
455+ $0.1107 $50.3685
970+ $0.1036 $100.4920
1,500+ $0.1000 $150.0000
2,155+ $0.0929 $200.1995
2,800+ $0.0893 $250.0400
3,500+ $0.0858 $300.3000
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 36,340 pieces
MOQ: 455 pcs
Order Increment : 1 pcs
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