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Same model may have multiple batches, images only for reference.
BSS315PH6327XTSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSS315PH6327XTSA1

Part No BSS315PH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.5A SOT23
Datasheet
BSS315PH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 2.3nC @ 5V
Max Input Capacitance 282pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024521-BSS315PH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS315PH6327XTSA1 CAD Model

Description

The Infineon Technologies BSS315PH6327XTSA1 is a P-Channel MOSFET that is designed for use in a wide range of applications.

  • Maximum Power Dissipation: 500mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.5A (Ta)
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
240+ $0.2123 $50.9520
505+ $0.1989 $100.4445
785+ $0.1921 $150.7985
1,120+ $0.1787 $200.1440
1,455+ $0.1720 $250.2600
1,815+ $0.1653 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 91,710 pieces
MOQ: 240 pcs
Order Increment : 1 pcs
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