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Same model may have multiple batches, images only for reference.
TSM210N02CX
Same model may have multiple batches, images only for reference.

TSM210N02CX

Part No TSM210N02CX
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 20V, 6.7A, SINGLE N-CHANNEL POWE / N-Channel 20 V 6.7A (Tc) 1.56W (Tc) Surface Mount SOT-23
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Series -
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 21mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 0.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 4.5 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.56W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number TSM210
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 12,000 pcs
Win Source Part Number 1383744-TSM210N02CX
Ultra Librarian 3D Model Ultra Librarian TSM210N02CX CAD Model

Description

The TSM210N02CX is an N-channel MOSFET transistor designed for various electronic applications, manufactured by Taiwan Semiconductor.

  • Drain to Source Voltage: 20V
  • Continuous Drain Current: 6.7A
  • On-Resistance: 21mOhm
  • Gate Threshold Voltage: 0.8V
  • Package: TO-236-3, SC-59, SOT-23-3
  • Mounting Type: Surface Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5821 $52.3890
210+ $0.4777 $100.3170
325+ $0.4627 $150.3775
450+ $0.4478 $201.5100
580+ $0.4329 $251.0820
775+ $0.3881 $300.7775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,811 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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