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Same model may have multiple batches, images only for reference.
BSS315PL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS315PL6327HTSA1

Part No BSS315PL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.5A SOT-23
Datasheet
BSS315PL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 11μA
Max Gate Charge 2.3nC @ 5V
Max Input Capacitance 282pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 150 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024522-BSS315PL6327HTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS315PL6327HTSA1 CAD Model

Description

The product specification is provided as a Win Source Part Number: 1024522-BSS315PL6327HTSA1, and it falls under the category of discrete semiconductor products.

  • Type: MOSFET
  • Channel Polarity: P-channel
  • Maximum Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.5A @ 25 degrees Celsius
  • Maximum Rds On: 150 mOhm @ 1.5A and 10V

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