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Same model may have multiple batches, images only for reference.
BSS316NL6327HTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS316NL6327HTSA1

Part No BSS316NL6327HTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 1.4A SOT-23
Datasheet
BSS316NL6327HTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 3.7μA
Max Gate Charge 0.6nC @ 5V
Max Input Capacitance 94pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 1.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024524-BSS316NL6327HTSA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSS316NL6327HTSA1 CAD Model

Description

The Infineon Technologies BSS316NL6327HTSA1 is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 1.4A @ Ta.

  • Power Dissipation: 500mW (Ta)
  • Maximum Rds On: 160 mOhm @ 1.4A, 10V
  • Gate-Source Threshold Voltage: 2V @ 3.7μA
  • Maximum Gate Charge: 0.6nC @ 5V
  • Maximum Input Capacitance: 94pF @ 15V
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-SOT23-3
  • Dimensions: TO-236-3, SC-59, SOT-23-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
550+ $0.1057 $58.1350
1,335+ $0.0868 $115.8780
2,065+ $0.0841 $173.6665
2,845+ $0.0813 $231.2985
3,675+ $0.0787 $289.2225
4,920+ $0.0705 $346.8600
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Availability: 25,000 pieces
MOQ: 550 pcs
Order Increment : 1 pcs
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