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Same model may have multiple batches, images only for reference.
BSS670S2LH6327XTSA1 Real Image
Same model may have multiple batches, images only for reference.

BSS670S2LH6327XTSA1

Part No BSS670S2LH6327XTSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 540MA SOT23
Datasheet
BSS670S2LH6327XTSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 2.7μA
Max Gate Charge 2.26nC @ 10V
Max Input Capacitance 75pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 360mW (Ta)
Maximum Rds On at Id,Vgs 650 mOhm @ 270mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-SOT23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1024526-BSS670S2LH6327XTSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BSS670S2LH6327XTSA1 CAD Model

Description

The Infineon Technologies 1024526-BSS670S2LH6327XTSA1 is a medium popularity electronic component with a sufficient supply and demand status.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 540mA @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
710+ $0.0708 $50.2680
1,510+ $0.0663 $100.1130
2,345+ $0.0641 $150.3145
3,360+ $0.0596 $200.2560
4,360+ $0.0574 $250.2640
5,445+ $0.0551 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 111,320 pieces
MOQ: 710 pcs
Order Increment : 1 pcs
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