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SSM3J15F,LF

Part No SSM3J15F,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 12Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.7V @ 100µA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9.1 pF @ 3 V
Power Dissipation (Max) 200mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package S-Mini
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number SSM3J15
Other Names SSM3J15FLFCT,SSM3J15FLFTR,SSM3J15FLFDKR,SSM3J15F,LF(B
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277959-SSM3J15F,LF
Ultra Librarian 3D Model Ultra Librarian SSM3J15F,LF CAD Model

Description

The SSM3J15F,LF is a P-channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Drain to Source Voltage (Vdss): 30V
  • Current Continuous Drain (Id): 100mA (Ta)
  • Maximum On-Resistance (Rds On): 12Ohm @ 10mA, 4V
  • Maximum Gate-Source Voltage (Vgs): ±20V
  • Gate Threshold Voltage (Vgs(th)): 1.7V @ 100μA
  • Power Dissipation: 200mW (Ta)
  • Input Capacitance (Ciss): 9.1pF @ 3V
  • Packaging: Tape & Reel
  • Standard Package: 3,000
  • Package Shape: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
  • Suitable for: FETs and MOSFETs applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
430+ $0.1165 $50.0950
1,050+ $0.0956 $100.3800
1,620+ $0.0926 $150.0120
2,235+ $0.0896 $200.2560
2,890+ $0.0866 $250.2740
3,865+ $0.0777 $300.3105
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 152,100 pieces
MOQ: 430 pcs
Order Increment : 1 pcs
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