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BSZ019N03LS

Part No BSZ019N03LS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 22A Automotive 8-Pin TSDSON EP T/R / MOSFET N-CH 30V 22A TSDSON-8
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22A (Ta). 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 2800pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 1.9 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8-FL
Dimension 8-PowerTDFN
Win Source Part Number 1024553-BSZ019N03LS
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name BSZ019N03LS
Introduction Date February 24, 2010
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian BSZ019N03LS CAD Model

Description

The Infineon Technologies BSZ019N03LS is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 22A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 22A @ 25°C
  • Maximum Power Dissipation: 2.1W (Ta), 69W (Tc)
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Package: PG-TSDSON-8-FL
  • Maximum Rds On: 1.9 mOhm @ 20A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4242 $56.9680
75+ $1.3341 $100.0575
120+ $1.2890 $154.6800
170+ $1.1989 $203.8130
220+ $1.1538 $253.8360
275+ $1.1087 $304.8925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,880 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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