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DMTH6004SCTB-13

Part No DMTH6004SCTB-13
Manufacturer Diodes Incorporated
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 100A TO263AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 51 Weeks
Features N-Channel 60 V 100A (Tc) 4.7W (Ta), 136W (Tc) Surface Mount TO-263
Manufacturer Diodes Incorporated
Series Automotive, AEC-Q101
Package Reel - TR
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package TO-263
Family Name DMTH6004
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number DMTH6004SCTB-13DITR, DMTH6004SCTB-13DIDKR, DMTH6004SCTB-13DICT, DMTH6004SCTB-13-ND
Quantity per package 800
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 869189-DMTH6004SCTB-13
Ultra Librarian 3D Model Ultra Librarian DMTH6004SCTB-13 CAD Model

Description

DMTH6004SCTB-13 - N-Channel Enhancement Mode MOSFET by Diodes Incorporated

The DMTH6004SCTB-13 is a high-performance, N-channel enhancement mode MOSFET designed and manufactured by Diodes Incorporated, a leading global manufacturer and supplier of high-quality application-specific standard products within the broad discrete, logic, analog, and mixed-signal semiconductor markets. This MOSFET is a testament to Diodes Incorporated's commitment to providing energy-efficient power management solutions.

With its advanced trench MOSFET technology, the DMTH6004SCTB-13 offers excellent R<sub>DS(on) and low gate charge performance, making it suitable for a wide range of power applications. Its low on-resistance and high switching speed are ideal for high-efficiency power management tasks.

Key Features of the DMTH6004SCTB-13:

  • Low On-Resistance: The device features a very low R<sub>DS(on), which ensures minimal power loss and heat generation during operation, enhancing overall efficiency and reliability.
  • High-Speed Switching: Designed for fast switching applications, the DMTH6004SCTB-13 provides quick and efficient performance, which is crucial for modern electronic systems.
  • Power Dissipation: With a power dissipation of up to 3.8W, this MOSFET can handle significant power levels, making it suitable for high-power applications.
  • Voltage and Current Ratings: It can sustain a drain-source voltage (V<sub>DSS) of 60V and a continuous drain current (I<sub>D) of 10A, which allows it to be used in various circuitries that require robust voltage and current handling capabilities.
  • Thermal Management: The device comes in a PowerDI®5 package, which provides excellent thermal performance and is designed for compact PCB layouts.

The DMTH6004SCTB-13 is RoHS-compliant, reflecting Diodes Incorporated's dedication to environmental responsibility. Its applications span across various sectors, including power supply, DC-DC converters, power management in computing and telecommunications, motor drives, and other power-intensive applications.

Overall, the DMTH6004SCTB-13 from Diodes Incorporated is a robust and efficient solution for designers looking to optimize their power management systems with a reliable and high-performance N-channel MOSFET.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.2309 $50.7708
29+ $3.4715 $100.6735
45+ $3.3630 $151.3350
62+ $3.2545 $201.7790
80+ $3.1461 $251.6880
107+ $2.8206 $301.8042
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Availability: 413 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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