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BSZ031NE2LS5ATMA1

Part No BSZ031NE2LS5ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 19A/40A TSDSON / N-Channel 25 V 19A (Ta), 40A (Tc) 2.1W (Ta), 30W (Tc) Surface Mount PG-TSDSON-8-FL
Datasheet
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.3 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 12 V
FET Feature -
Power Dissipation (Max) 2.1W (Ta), 30W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-FL
Package / Case 8-PowerTDFN
Base Product Number BSZ031
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000 pcs
Win Source Part Number 1381629-BSZ031NE2LS5ATMA1
Ultra Librarian 3D Model Ultra Librarian BSZ031NE2LS5ATMA1 CAD Model

Description

The OptiMOS™ MOSFET is a single N-Channel FET designed for discrete semiconductor products. OptiMOS™ MOSFET is designed by unknown manufacturer.

  • Channel Type: N-Channel
  • Category: Discrete Semiconductor Products
  • Vdss: 25V
  • Id: 19A (Ta), 40A (Tc)
  • Rds On: 3.1mOhm @ 20A, 10V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Gate Charge (Qg): 18.3nC @ 10V
  • Mounting Type: Surface Mount

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,300 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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